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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.05
2.0
1.00
1.5
1.0
0.95
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.90
-100
*Notes:
1. V GS = 0V
2. I D = 250 μ A
-50 0 50 100 150 200
o
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 75A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
1000
Figure 10. Maximum Drain Current
vs. Case Temperature
120
100
10
Operation in This Area
10 μ s
100 μ s
1ms
100
80
60
V GS = 10V
1
is Limited by R DS(on)
10ms
SINGLE PULSE
DC
40
T C = 25 C
T J = 175 C
0.1
o
o
20
R θ JC = 0.51 C/W
R θ JC = 0.51 C/W
T C , Case Temperature [ C]
0.01
0.1
o
1 10 100
V DS , Drain-Source Voltage [V]
300
0
25
o
50 75 100 125 150
o
175
Figure 11. Unclamped Inductive Switching
Capability
300
100
If R = 0
t AV = (L) ( I AS ) / ( 1.3*RATED BV DSS -V DD )
If R = 0
t AV = (L/R)In [( I AS *R ) / ( 1.3*RATED BV DSS -V DD ) +1 ]
STARTING T J = 150 C
o
STARTING T J = 25 C
10
o
1
0.001
0.01
0.1
1
10
100
1000
t AV , TIME IN AVALANCHE (ms)
?2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C2
4
www.fairchildsemi.com
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